Intel Core 3 201TE vs Qualcomm Snapdragon X2E-78-100 Comparison

Intel
INTEL

Intel Core 3 201TE

CORE STATE Bartlett Lake
CORE SPECS 4 Cores / 8 Threads
CLOCK SPEED 2.9 Base / 4.6 GHz Turbo
CACHE 12 MB (shared)
MAX TDP 45W
ARCHITECTURE Bartlett Lake
nm
PROCESS 10 nm
LAUNCH DATE 2025
VS
Unknown
CPU

Snapdragon X2E-78-100

CORE STATE Glymur
CORE SPECS 12 Cores / 12 Threads
CLOCK SPEED 4 Base
CACHE
MAX TDP
ARCHITECTURE Glymur
nm
PROCESS 3 nm
LAUNCH DATE 2026

Analysis: Intel Core 3 201TE vs Qualcomm Snapdragon X2E-78-100

Head-to-Head Benchmarks

The database contains no recorded benchmark scores for either processor. Both the Intel Core 3 201TE and the Qualcomm Snapdragon X2E-78-100 return an average benchmark score of zero, and the head-to-head benchmark array is empty. Consequently, there are no measured wins for either part, no comparative performance deltas, and no nearest rival scores to contextualize against. The absence of data means no quantitative performance verdict can be derived from direct testing.

Both processors sit at the 50th percentile among all CPUs in the database. That percentile placement is identical, but it is not a performance measurement; it simply reflects their position in the overall distribution when no benchmark submissions exist. The recorded data indicates that neither chip has been exercised by the benchmark suite yet.

FAQ

Q: Which processor has more cores and threads?

A: The Qualcomm Snapdragon X2E-78-100 has 12 cores and 12 threads. The Intel Core 3 201TE has 4 cores and 8 threads.

Q: What are the base clock speeds of the two processors?

A: The Intel Core 3 201TE has a base clock of 2.90 GHz. The Qualcomm Snapdragon X2E-78-100 has a base clock of 4.00 GHz. Intel lists a boost clock of 4.60 GHz for its part; Qualcomm does not list a boost clock in the database.

Q: Do both processors support the same memory types?

A: No. The Intel Core 3 201TE supports DDR4 and DDR5 memory, while the Qualcomm Snapdragon X2E-78-100 supports LPDDR5X. Both use a dual-channel memory bus.

Q: What is the memory bandwidth difference?

A: The Qualcomm Snapdragon X2E-78-100 has a memory bandwidth of 152.4 GB/s. The Intel Core 3 201TE has a memory bandwidth of 76.8 GB/s. Qualcomm's figure is exactly double Intel's.

Q: Which processor has ECC memory support?

A: The Intel Core 3 201TE supports ECC memory. The Qualcomm Snapdragon X2E-78-100 does not list ECC support in the database.

Q: What process nodes do the two chips use?

A: The Intel Core 3 201TE uses a 10 nm process node fabricated by Intel. The Qualcomm Snapdragon X2E-78-100 uses a 3 nm process node fabricated by TSMC.

Q: Which processor has a larger L2 cache?

A: The Qualcomm Snapdragon X2E-78-100 has a shared L2 cache of 16 MB. The Intel Core 3 201TE has an L2 cache of 1.25 MB per core. With 4 cores, Intel's total L2 amounts to 5 MB, though the database lists it per core.

The Verdict

The data does not support a performance verdict. With no benchmark scores recorded for either processor, no meaningful comparison of computational speed, efficiency, or real-world workload behavior can be made. Both parts share the same 50th percentile rank, but that rank is uninformative without test data behind it.

What the data does reveal is a clear segmentation in design intent. The Intel Core 3 201TE is a desktop part on Intel Socket 1700 with 4 cores, 8 threads, a 45 W TDP, and ECC support. It uses a 10 nm Intel process, has a 163 mm² die, and carries a launch MSRP of $134. The Qualcomm Snapdragon X2E-78-100 is a mobile part on Qualcomm BGA 2343 with 12 cores, 12 threads, no listed TDP, and no ECC support. It uses a 3 nm TSMC process and has a 220 mm² die. These are different products for different sockets and market segments, and the absence of benchmarks means the verdict is limited to specification-level differences.

Specification Differences

The two processors differ in nearly every core specification. The Intel Core 3 201TE has 4 cores and 8 threads, while the Qualcomm Snapdragon X2E-78-100 has 12 cores and 12 threads. Intel's part has a base clock of 2.90 GHz and a boost clock of 4.60 GHz; Qualcomm's part has a base clock of 4.00 GHz and no listed boost clock. The Intel chip has a TDP of 45 W; the Qualcomm chip has no TDP listed.

Process node and foundry also differ. Intel uses a 10 nm process at its own foundry, while Qualcomm uses a 3 nm process at TSMC. The Intel die is 163 mm²; the Qualcomm die is 220 mm².

Memory support diverges sharply. The Intel Core 3 201TE supports DDR4 and DDR5, while the Qualcomm Snapdragon X2E-78-100 supports LPDDR5X. Both are dual-channel, but memory bandwidth is 76.8 GB/s for Intel and 152.4 GB/s for Qualcomm. Intel lists ECC memory support; Qualcomm does not.

PCIe lane counts differ as well. The Intel part provides Gen 5 with 16 lanes (CPU only), while the Qualcomm part provides Gen 5 with 12 lanes (CPU only). Integrated graphics also differ: the Intel chip uses UHD Graphics 730, and the Qualcomm chip uses Adreno X2-85.

The Intel Core 3 201TE is a desktop part with a release date of 2025-01-12 and a launch MSRP of $134. The Qualcomm Snapdragon X2E-78-100 is a mobile part with a release date of 2026-04-05 and no launch MSRP listed. Both are active production parts, both have locked multipliers, and neither has an unlocked overclocking capability.

Architecture Differences

The architectural split is fundamental. The Intel Core 3 201TE is built on the Bartlett Lake codename and belongs to the Core 3 (Bartlett Lake) generation. It is a 10 nm Intel-fabricated design with 4 cores and 8 threads, indicating simultaneous multithreading. Its cache hierarchy uses an 80 KB L1 per core, a 1.25 MB L2 per core, and a shared 12 MB L3 cache. The 45 W TDP and desktop socket placement point to a conventional x86 desktop design.

The Qualcomm Snapdragon X2E-78-100 uses the Glymur codename and belongs to the Snapdragon X2 (Elite) generation. It is a 3 nm TSMC-fabricated design with 12 cores and 12 threads, which indicates no simultaneous multithreading. Its cache hierarchy uses a 288 KB L1 per core and a shared 16 MB L2 cache, with no L3 cache listed. The mobile socket, LPDDR5X memory support, and lack of a TDP figure reflect a low-power mobile design.

The process node difference is substantial. Intel's 10 nm process is two generations behind Qualcomm's 3 nm process in the database's listed node names. The die size difference, 163 mm² for Intel versus 220 mm² for Qualcomm, shows that Qualcomm packs 12 cores into a larger physical area with a denser process.

Threading strategy differs as well. Intel delivers 8 threads from 4 cores, doubling thread count through SMT. Qualcomm delivers 12 threads from 12 cores, relying on physical core count alone. The base clock difference, 2.90 GHz for Intel versus 4.00 GHz for Qualcomm, suggests Qualcomm prioritizes higher sustained frequencies per core, though the lack of a boost clock for Qualcomm prevents a full comparison.

Where Each One Wins

Without benchmark data, the wins are architectural rather than measured. The Intel Core 3 201TE holds advantages in specific hardware features. It supports ECC memory, which the Qualcomm part does not. It offers 16 PCIe Gen 5 lanes versus Qualcomm's 12. It supports both DDR4 and DDR5 memory, providing broader memory compatibility. It has a lower base clock at 2.90 GHz, but its 4.60 GHz boost clock gives it a rated single-core frequency ceiling. Its 45 W TDP is a listed power figure, whereas Qualcomm has none recorded. Its desktop socket and 163 mm² die suggest a conventional desktop integration path.

The Qualcomm Snapdragon X2E-78-100 holds advantages in core count, process node, and memory bandwidth. It has 12 cores versus Intel's 4, a 3 nm process versus Intel's 10 nm, and 152.4 GB/s of memory bandwidth versus Intel's 76.8 GB/s. Its base clock of 4.00 GHz is higher than Intel's 2.90 GHz base. Its shared L2 cache of 16 MB exceeds Intel's per-core L2 arrangement in total capacity. Its 220 mm² die is larger, and its Adreno X2-85 integrated graphics differ from Intel's UHD Graphics 730.

The market segment split is explicit. Intel positions the Core 3 201TE as a desktop processor with a known TDP and ECC support, aimed at desktop workloads where memory reliability and socket compatibility matter. Qualcomm positions the Snapdragon X2E-78-100 as a mobile processor with high core count, high base clock, and high memory bandwidth, aimed at mobile workloads where density and bandwidth take priority. The data does not indicate which chip wins in any benchmark, so the selection between them rests on platform requirements, not measured performance.

DETAILED SPECIFICATIONS

SPECIFICATION
3 201TE
Snapdragon X2E-78-100
Core Specs
Cores
4
12 +200.0%
Threads
8
12 +50.0%
Base Clock (GHz)
2.9
4 +37.9%
Boost Clock (GHz)
4.6
Frequency (GHz)
2.9
4 +37.9%
Turbo Clock (GHz)
4.6
Multiplier
29
40 +37.9%
SMP CPUs
1
1 0.0%
Cache
L1 Cache
80 KB (per core)
288 KB (per core)
L2 Cache
1.25 MB (per core)
16 MB (shared)
L3 Cache
12 MB (shared)
Power
TDP (W)
45
PL1
45 W
PL2
106 W
Architecture
Codename
Bartlett Lake
Glymur
Generation
Core 3 (Bartlett Lake)
Snapdragon X2 (Elite)
Process Size
10 nm
3 nm
Die Size
163 mm²
220 mm²
Foundry
Intel
TSMC
Memory
Memory Support
DDR4, DDR5
LPDDR5X
Memory Bus
Dual-channel
Dual-channel
Memory Bandwidth
76.8 GB/s
152.4 GB/s
ECC Memory
Yes
No
DDR4 Speed
3200 MT/s
Platform
Socket
Intel Socket 1700
Qualcomm BGA 2343
Chipsets
W680, R680E, Q670e, Q670, H610E, H610
PCIe
Gen 5, 16 Lanes(CPU only)
Gen 5, 12 Lanes(CPU only)
Intel Hybrid
Hybrid Cores
6 + 6
E-Core Frequency
3.4 GHz
AI/NPU
NPU
Yes / 80 TOPS
Graphics
Integrated Graphics
UHD Graphics 730
Adreno X2-85
Other
Market
Desktop
Mobile
Production Status
Active
Active
Launch Price
$134
Part Number
SRPKDQ5CK
X2E78100
Package
FC-LGA16A
FC-BGA
Tj Max
100°C
View Core 3 201TE Details View Snapdragon X2E-78-100 Details